參數(shù)資料
型號(hào)： 2SK3131
廠商： Toshiba Corporation
英文描述： Field Effect Transistor Silicon N Channel MOS Type
中文描述： 場(chǎng)效應(yīng)晶體管硅?頻道馬鞍山類型
文件頁數(shù)： 2/6頁
文件大小： 420K
代理商： 2SK3131
2SK3131
2004-07-06
2
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
—
—
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±100 μA
,
V
DS
= 0 V
±30
—
—
V
Drain cut
off current
I
DSS
V
DS
= 500 V
,
V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
500
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.4
—
3.4
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 25 A
—
0.085
0.11
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 25 A
15
35
—
S
Input capacitance
C
iss
—
11000
—
Reverse transfer capacitance
C
rss
—
2100
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
4200
—
pF
Rise time
tr
—
105
—
Turn
on time
t
on
—
160
—
Fall time
t
f
—
65
—
Switching time
Turn
off time
t
off
—
245
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
—
280
—
Gate
source charge
Q
gs
—
150
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
400 V, V
GS
= 10 V, I
D
= 50 A
—
130
—
nC
Source
Drain Ratings and Characteristics
(Ta =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
50
A
Pulse drain reverse current
(Note 1)
I
DRP
—
—
—
200
A
Forward voltage (diode)
V
DSF
V
DR
= 25 A, V
GS
= 0 V
—
—
1.7
V
Reverse recovery time
t
rr
—
105
—
ns
Reverse recovery charge
Q
rr
I
DR
= 50 A, V
GS
= 0 V
dI
DR
/ dt
=
100 A / μs
—
380
—
nC
Marking
2SK3131
TOSHIBA
JAPAN
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3131(Q) 功能描述:MOSFET N-ch 500V 50A 0.140 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK3131_06 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Chopper Regulator DC−DC Converter and Motor Drive Applications
2SK3131_09 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator DC−DC Converter and Motor Drive Applications
2SK3132 功能描述:MOSFET N-CH 500V 50A TO-3P(L) RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3132(Q) 功能描述:MOSFET N-ch 500V 50A 0.110 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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