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參數(shù)資料
| 型號： | 2SK3126 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 2SK3126 |
2SK3126
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK3126
Switching Regulator Applications
Low drainsource ON resistance
: RDS (ON) = 0.48 (typ.)
High forward transfer admittance
: |Yfs| = 7.5 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 450 V)
Enhancement mode
: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
450
V
Draingate voltage (RGS = 20 k)
VDGR
450
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
10
A
Drain current
Pulse (Note 1)
IDP
40
A
Drain power dissipation (Tc = 25°C)
PD
40
W
Single pulse avalanche energy
(Note 2)
EAS
222
mJ
Avalanche current
IAR
10
A
Repetitive avalanche energy (Note 3)
EAR
4
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal reverse, channel to case
Rth (chc)
3.125
°C / W
Thermal reverse, channel to ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 3.7 mH, RG = 25 , IAR = 10 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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