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參數(shù)資料
| 型號(hào)： | 2SK3112-ZJ |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
| 封裝： | MP-25ZJ, TO-263, 3 PIN |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 79K |
| 代理商： | 2SK3112-ZJ |
1998,2001
MOS FIELD EFFECT TRANSISTOR
2SK3112
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D13335EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP (K)
Printed in Japan
DATA SHEET
DESCRIPTION
The 2SK3112 is N-channel MOS FET device that features a
low on-state resistance and excellent switching characteristics,
and designed for high voltage applications such as DC/DC
converter, actuator driver.
FEATURES
Gate voltage rating ±30 V
Low on-state resistance
RDS(on) = 110 m
MAX. (VGS = 10 V, ID = 13 A)
Low input capacitance
Ciss = 1600 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
200
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±30
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±25
A
Drain Current (pulse)
Note1
ID(pulse)
±75
A
Total Power Dissipation (TC = 25°C)
PT1
100
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
55 to +150
°C
Single Avalanche Current
Note2
IAS
25
A
Single Avalanche Energy
Note2
EAS
250
mJ
Notes 1. PW
≤ 10
s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 100 V, RG = 25
, VGS = 20 V→0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3112
TO-220AB
2SK3112-S
TO-262
2SK3112-ZJ
TO-263(MP-25ZJ)
(TO-220AB)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3112-AZ | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3112 | 25 A, 200 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3113B(1)-S27-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-251AA |
| 2SK3113B-ZK-E1-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
| 2SK3113B-ZK-E2-AY | 2000 mA, 600 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252AA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO251 Bulk |
| 2SK3113B | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B(1)-S27-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
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