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參數(shù)資料
| 型號(hào)： | 2SK3108 |
| 元件分類： | JFETs |
| 英文描述： | 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁數(shù)： | 8/10頁 |
| 文件大?。?/td> | 197K |
| 代理商： | 2SK3108 |
Data Sheet D13331EJ2V0DS
5
2SK3108
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TC - Case Temperature - C
dT
-
Percentage
of
Rated
Power
-
%
0
20
40
60
80
100
120
140
160
20
40
60
80
100
0
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature - C
P
T
-
Total
Power
Dissipation
-
W
0
20
40
60
80
100
120
140
160
40
30
20
10
0
FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
0.1
1
10
100
10
100
1000
TC = 25 C
Single Pulse
RDS(on)
Lim
ited
100
ms
Po
w
er D
is
sip
atio
n L
im
ite
d
3 ms
10
ms
1 ms
100
s
PW
=
10
s
ID(pulse)
ID(DC)
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
rth
(t)
-
Transient
Thermal
Resistance
-
C/
W
10
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1 000
Single Pulse
10
100
Rth(ch-A) = 62.5C/W
Rth(ch-C) = 5C/W
5
相關(guān)PDF資料 |
PDF描述 |
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| 2SK3110 | 14 A, 200 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3132 | 50 A, 500 V, 0.095 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3142-E | 60 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3147S | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3147L | 5 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3108-AZ | 制造商:Renesas Electronics 功能描述:Nch 200V 8A 400m@10V IsolatedTO220 Bulk |
| 2SK3109 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3109-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3109-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK311 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
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