參數(shù)資料
型號: 2SK3108-AZ
元件分類: JFETs
英文描述: 8 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: MP-45F, ISOLATED TO-220, 3 PIN
文件頁數(shù): 2/8頁
文件大?。?/td> 68K
代理商: 2SK3108-AZ
Data Sheet D13331EJ2V0DS
2
2SK3108
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristics
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Drain Leakage Current
IDSS
VDS = 200 V, VGS = 0 V
100
A
Gate Leakage Current
IGSS
VGS =
±30 V, VDS = 0 V
±10
A
Gate to Source Cut-off Voltage
VGS(off)
VDS = 10 V, ID = 1 mA
2.5
4.5
V
Forward Transfer Admittance
| yfs |VDS = 10 V, ID = 4.0 A
1.5
S
Drain to Source On-state Resistance RDS(on)
VGS = 10 V, ID = 4.0 A
0.32
0.4
Input Capacitance
Ciss
VDS = 10 V
400
pF
Output Capacitance
Coss
VGS = 0 V
110
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
55
pF
Turn-on Delay Time
td(on)
VDD = 100 V, ID = 4.0 A
12
ns
Rise Time
tr
VGS(on) = 10 V
25
ns
Turn-off Delay Time
td(off)
RG = 10
40
ns
Fall Time
tf
20
ns
Total Gate Charge
QG
VDD = 160 V
18
nC
Gate to Source Charge
QGS
VGS = 10 V
3.5
nC
Gate to Drain Charge
QGD
ID = 8.0 A
10
nC
Diode Forward Voltage
VF(S-D)
IF = 8.0 A, VGS = 0 V
1.0
V
Reverse Recovery Time
trr
IF = 8.0 A, VGS = 0 V
250
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/
s
1.0
C
TEST CIRCUIT 3 GATE CHARGE
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
RL
VDD
TEST CIRCUIT 2 SWITCHING TIME
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
τ = 1 s
Duty Cycle
≤ 1 %
τ
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
VGS(on)
ID
ton
toff
td(on)
tr
td(off)
tf
10 %10 %
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