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參數(shù)資料
| 型號(hào)： | 2SK30ATMGR |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應(yīng)| N溝道| 2.6MA我（直）|到92 |
| 文件頁數(shù)： | 6/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK30ATMGR |
Datasheet Title
5
0
48
12
16
20
16
12
8
4
–50
0
50
100
150
200
0
V
= 10 V
GS
4 V
Pulse Test
0.5
0.4
0.3
0.2
0.1
Pulse Test
I
= 50 A
D
20 A
10 A
1
30
100
3
100
2
5
1
10
300
20
10
V
= 4 V
GS
10 V
Pulse Test
10, 20, 50 A
I
= 50 A
D
10, 20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
50
10
2
5
1
0.5
Tc = –25
°C
75
°C
25
°C
V
= 10 V
Pulse Test
DS
50
1000
Gate to Source Voltage
V
(V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
(V)
DS(on)
Drain
to
Source
Saturation
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(m
)
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature
Tc
(
°C)
R
(m
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
(A)
D
Forward
Transfer
Admittance
|y
|
(S)
fs
Forward Transfer Admittance vs.
Drain Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK30ATMO | TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | TO-92 |
| 2SK30ATMR | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK30ATMY | TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-92 |
| 2SK3102-01R | MOSFETs |
| 2SK3112S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK30ATM-GR(F) | 制造商:Toshiba 功能描述:Nch -50V 2.6mA to 6.5mA TO92 制造商:Toshiba 功能描述:Nch -50V 2.6mA to 6.5mA TO92 Bulk |
| 2SK30ATMO | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 600UA I(DSS) | TO-92 |
| 2SK30ATM-O(F) | 制造商:Toshiba 功能描述:Nch -50V 0.6mA to 1.4mA TO92 Bulk |
| 2SK30ATMR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 300UA I(DSS) | TO-92 |
| 2SK30ATMY | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 1.2MA I(DSS) | TO-92 |
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