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參數(shù)資料
| 型號： | 2SK3070L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 2SK3070L |
Datasheet Title
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source leak current
40
—
—
V
I
D
= 10 mA, V
GS
= 0
V
GS
=
±
20 V, V
DS
= 0
V
DS
= 40 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
Note1
I
D
= 40 A, V
GS
= 10 V
Note1
I
D
= 40 A, V
GS
= 4 V
Note1
I
D
= 40 A, V
DS
= 10 V
Note1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
GSS
I
DSS
V
GS(off)
R
DS(on)
—
—
±
0.1
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.0
—
2.5
V
Static drain to source on state
—
4.5
5.8
m
m
resistance
—
6.5
10
Forward transfer admittance
|y
fs
|
Ciss
50
80
—
S
Input capacitance
—
6800
—
pF
Output capacitance
Coss
—
1300
—
pF
Reverse transfer capacitance
Crss
—
380
—
pF
Total gate charge
Qg
—
130
—
nc
V
DD
= 25 V
V
GS
= 10 V
I
D
= 75 A
V
GS
= 10 V, I
D
= 40 A
R
L
= 0.75
Gate to source charge
Qgs
—
25
—
nc
Gate to drain charge
Qgd
—
30
—
nc
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
60
—
ns
Rise time
—
300
—
ns
Turn-off delay time
—
550
—
ns
Fall time
—
400
—
ns
Body–drain diode forward voltage
—
1.05
—
V
I
F
= 75 A, V
GS
= 0
I
= 75 A, V
= 0
diF/ dt = 50 A/
μ
s
Body–drain diode reverse
recovery time
Note:
1. Pulse test
—
90
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3070L-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3070S | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3072 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK3072-TB-E | 制造商:SANYO 功能描述:Nch 450V 0.03A 275 bo Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 450V 0.03A TO-253 |
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