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參數(shù)資料
| 型號： | 2SK3069 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 52K |
| 代理商： | 2SK3069 |
2SK3069
5
0
4
8
12
16
20
20
16
12
8
4
–50
0
50
100
150
200
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
100
Case Temperature Tc (
°
C)
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
V = 10 V
4 V
Pulse Test
R
D
2.0
1.6
1.2
0.8
0.4
Pulse Test
I = 50 A
20 A
10 A
1
20
100
2
2
5
1
10
200
20
10
V = 4 V
10 V
Pulse Test
10, 20, 50 A
I = 50 A
10 A
20 A
0.1
0.3
1
3
10
30
100
500
100
200
20
10
50
2
5
1
0.5
Tc = –25
°
C
75
°
C
25
°
C
V = 10 V
Pulse Test
50
50
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3070 | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3076 | Silicon N Channel MOS FET High Speed Power Switching |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3069-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK3070(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-262VAR |
| 2SK3070(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 40V V(BR)DSS | 75A I(D) | TO-263VAR |
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