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參數(shù)資料
| 型號： | 2SK3067 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 127K |
| 代理商： | 2SK3067 |
2SK3067
2002-06-05
2
Electrical Characteristics
(Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
= ±25 V
,
V
DS
= 0 V
—
—
±10
μA
Gate
source breakdown voltage
V
(BR) GSS
I
G
= ±10 μA
,
V
DS
= 0 V
±30
—
—
V
Drain cut
off current
I
DSS
V
DS
= 600 V
,
V
GS
= 0 V
—
—
100
μA
Drain
source breakdown voltage
V
(BR) DSS
I
D
= 10 mA
,
V
GS
= 0 V
600
—
—
V
Gate threshold voltage
V
th
V
DS
= 10 V,
I
D
= 1 mA
2.0
—
4.0
V
Drain
source ON resistance
R
DS (ON)
V
GS
= 10 V,
I
D
= 1 A
—
4.2
5.0
Forward transfer admittance
|Y
fs
|
V
DS
= 10 V,
I
D
= 1 A
0.8
1.7
—
S
Input capacitance
C
iss
—
380
—
Reverse transfer capacitance
C
rss
—
40
—
Output capacitance
C
oss
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
—
120
—
pF
Rise time
t
r
—
15
—
Turn
on time
t
on
—
25
—
Fall time
t
f
—
20
—
Switching time
Turn
off time
t
off
—
80
—
ns
Total gate charge (Gate
source
plus gate
drain)
Q
g
—
9
—
Gate
source charge
Q
gs
—
5
—
Gate
drain (“miller”) charge
Q
gd
V
DD
≈
480 V, V
GS
= 10 V, I
D
= 2 A
—
4
—
nC
Source
Drain Ratings and Characteristics
(Tc =
25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
I
DR
—
—
—
2
A
I
DRP
t = 1 ms
—
—
5
A
Pulse drain reverse current
(Note 1)
I
DRP
t = 100 μs
—
—
8
A
Forward voltage (diode)
V
DSF
I
DR
= 2 A, V
GS
= 0 V
—
—
1.5
V
Reverse recovery time
t
rr
—
1000
—
ns
Reverse recovery charge
Q
rr
I
DR
= 2 A, V
GS
= 0 V
dI
DR
/ dt
=
100 A / μs
—
5.0
—
μC
Marking
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