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參數(shù)資料
| 型號： | 2SK3059 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 中文描述： | 開關(guān)N溝道功率MOSFET的工業(yè)用 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 67K |
| 代理商： | 2SK3059 |
Data Sheet D13098EJ3V0DS
2
2SK3059
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Drain Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20
V, V
DS
= 0
V
±
10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 25 A
15
45
S
R
DS(on)1
V
GS
= 10
V, I
D
= 25
A
11
13
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 4.0
V, I
D
= 25
A
16
20
m
Input Capacitance
C
iss
2400
pF
Output Capacitance
C
oss
700
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10
V
V
GS
= 0
V
f = 1
MHz
280
pF
Turn-on Delay Time
t
d(on)
30
ns
Rise Time
t
r
420
ns
Turn-off Delay Time
t
d(off)
140
ns
Fall Time
t
f
I
D
= 25
A
V
GS(on)
= 10
V
V
DD
= 30
V
R
G
= 10
380
ns
Total Gate Charge
Q
G
50
nC
Gate to Source Charge
Q
GS
7.5
nC
Gate to Drain Charge
Q
GD
I
D
= 50
A
V
DD
= 48
V
V
GS
= 10
V
17
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 50
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
55
ns
Reverse Recovery Charge
Q
rr
I
F
= 50
A, V
GS
= 0
V
di/dt = 100
A
/
μ
s
75
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
R
G
= 25
50
PG.
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
D.U.T.
TEST CIRCUIT 3 GATE CHARGE
TEST CIRCUIT 2 SWITCHING TIME
PG.
R
G
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1
s
Duty Cycle
≤
1%
μ
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
(on)
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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