參數(shù)資料
型號(hào): 2SK2978
廠商: Hitachi,Ltd.
英文描述: Silicon N Channel MOS FET High Speed Power Switching
中文描述: 硅?通道場(chǎng)效應(yīng)晶體管高速電源開(kāi)關(guān)
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 45K
代理商: 2SK2978
2SK2978
4
0
2
4
6
8
10
0.25
0.2
0.15
0.1
0.05
–40
0
40
80
120
160
0
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
1
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
S
R
D
1
0.8
0.6
0.4
0.2
Pulse Test
I = 5 A
1.5 A
0.1
1
2
0.2
0.02
0.05
0.01
0.5
10
5
0.1
0.1
0.2
0.5
1
2
5
10
10
5
1
2
0.2
0.5
0.1
1 A
2.5 A
0.2
0.5
V = 2.5 V
4 V
1 A
V = 4 V
1, 2.5 A
5 A
2.5 V
2.5 A
I = 5 A
Tc = –25 °C
25 °C
75 °C
V = 10 V
Pulse Test
Pulse Test
相關(guān)PDF資料
PDF描述
2SK2980 Silicon N Channel MOS FET High Speed Power Switching
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2SK2983 Switching N-channel power MOS FET industrial use
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