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參數(shù)資料
| 型號： | 2SK2952 |
| 元件分類： | JFETs |
| 英文描述： | 8.5 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 415K |
| 代理商： | 2SK2952 |
2SK2952
2004-07-06
2
Electrical Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 A, VDS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 400 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
400
—
V
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
—
0.4
0.55
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 5 A
4.0
8.0
—
S
Input capacitance
Ciss
—
1340
—
Reverse transfer capacitance
Crss
—
160
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
490
—
pF
Rise time
tr
—
22
—
Turnon time
ton
—
60
—
Fall time
tf
—
32
—
Switching time
Turnoff time
toff
—
140
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
34
—
Gatesource charge
Qgs
—
18
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 320 V, VGS = 10 V, ID = 8.5 A
—
16
—
nC
SourceDrain Ratings and Characteristics (Ta
= 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
8.5
A
Pulse drain reverse current
(Note 1)
IDRP
—
34
A
Forward voltage (diode)
VDSF
IDR = 8.5 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
350
—
ns
Reverse recovery charge
Qrr
IDR = 8.5 A, VGS = 0 V
dIDR/dt = 100 A/s
—
2.6
—
C
Marking
Lot No.
(weekly code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
K2952
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2952(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 400V 8.5A 3-Pin (3+Tab) TO-220(NIS) Bulk |
| 2SK2952(Q,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2952Q | 制造商:Toshiba America Electronic Components 功能描述:"2SK2952 (Q) POWER MOSFET, BULK" |
| 2SK2953 | 功能描述:MOSFET N-Ch 600V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2953(F) | 功能描述:MOSFET N-Ch 600V 15A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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