參數(shù)資料
型號: 2SK2919
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關應用
文件頁數(shù): 2/4頁
文件大小: 106K
代理商: 2SK2919
2SK2919
No.6121–2/4
Continued from preceding page.
Switching Time Test Circuit
50
P.G
2SK2919
S
G
D
VOUT
VDD=200V
VGS
ID=1A
RL=200
PW=1
μ
s
D.C.
0.5%
VGS
10V
0V
r
m
a
P
l
b
m
y
S
s
n
o
n
o
C
s
g
n
R
y
t
U
n
m
p
x
a
m
e
m
i
y
a
D
e
D
F
e
w
r
F
s
v
e
R
N
m
F
m
O
i
O
i
e
d
e
d
-
T
s
R
-
T
l
F
o
D
o
D
t
o
)
tr
t
t
t
t
c
C
c
C
c
C
c
C
t
e
t
e
T
t
e
T
t
e
T
0
0
0
1
T
d
d
d
d
=
e
e
e
e
p
e
e
p
s
e
e
p
s
V
,
A
2
=
,
A
2
=
p
s
s
e
e
e
e
=
e
e
e
e
S
S
S
S
IS
S
I
0
2
5
0
1
1
6
4
s
s
s
s
n
n
n
n
V
n
e
e
m
i
y
a
t
)
tf
VD
S
tr
e
g
y
v
a
V
c
e
d
S
G
5
e
m
i
o
e
s
μ
A
0
0
1
s
1A
0.5A
ID
-
VDS
ID
-
VGS
RDS(on)
-
VGS
ID=2A
Tc=25
°
C
VDS=10V
VDS=10V
4.5V
5.0V
5.5V
10V
6.0V
4.0V
VGS=3.5V
Tc=
-
25
°
C
75
°
C
Tc=
-
25
°
C
75
°
C
25
°
C
25
°
C
5
4
3
2
1
00
4
Drain-to-Source Voltage, V
DS
– V
|y
fs
|
-
I
D
8
12
16
20
3.6
1.6
2.0
2.4
2.8
3.2
1.2
0.8
0.4
00
2
4
6
8
14
12
10
7
1.0
5
3
2
5
3
2
0.1
7
55
7
0.1
2
3
1.0
7
5
2
3
10
7
5
5
6
4
3
2
1
00
2
4
6
8
14
12
10
D
D
D
D
Gate-to-Source Voltage, V
GS
– V
F
Drain Current, I
D
– A
Gate-to-Source Voltage, V
GS
– V
S
O
D
相關PDF資料
PDF描述
2SK291 Silicon N-Channel Junction FET
2SK2922 Silicon N Channel MOS FET UHF Power Amplifier
2SK2925 Silicon N Channel MOS FET High Speed Power Switching
2SK2925L Silicon N Channel MOS FET High Speed Power Switching
2SK2925S Silicon N Channel MOS FET High Speed Power Switching
相關代理商/技術參數(shù)
參數(shù)描述
2SK2920 制造商:Toshiba America Electronic Components 功能描述:Part Number Only
2SK2925L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2925-S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2925STR-E 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 10A 3-Pin(2+Tab) DPAK(S) T/R Cut Tape
2SK2926 制造商:Renesas Electronics Corporation 功能描述: