參數(shù)資料
型號(hào): 2SK2909
廠商: Sanyo Electric Co.,Ltd.
英文描述: Ultrahigh-Speed Switching Applications
中文描述: 超高速開關(guān)應(yīng)用
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 220K
代理商: 2SK2909
2SK2909
No.3512–3/4
tr
SW Time
-
ID
A S O
PD
-
Ta
VDD=10V
VGS=4V
IDP=3.2A
Operation in this area
is limited by RDS(on).
2
3
5
7
2
3
5
2
3
5
7
2
3
5 7
2
3
5 7
Drain-to-Source Voltage,VDS– V
2
3
2
3
5 7
2
3
5
7
2
3
5
7
7
2
3
2
3
5
7
Ciss,Coss,Crss
-
VDS
VGS
-
Qg
f=1MHz
Ciss
Coss
Crss
2
3
5
7
2
3
5
7
2
3
5
7
VDS=10V
ID=800mA
10m
1m
100
μ
s
ID=0.8A
10
1.0
100
1000
0
1
2
3
4
5
6
7
8
9
10
10
1.0
100
td(on)
td(off)
tf
1.0
0.1
4
Drain-to-Source Voltage,VDS– V
2
0
6
8
10
12
14
16
18
20
1
2
3
4
6
5
0
20
60
40
Ambient Temperature, Ta –
°
C
80
120
100
140
160
0
0
0.04
0.08
0.12
0.16
0.20
0.24
0.28
0.01
0.1
1.0
0.1
1.0
10
0.01
RDS(on)
-
Ta
VGS=0
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
IF
-
VSD
ID=0.4A,VGS=4V
ID=0.1A,VGS=2.5V
0
20
-
20
-
40
-
60
40
60
80
100
120
160
140
T
-
2
°
C
2
°
C
7
°
C
100
0
200
500
300
350
400
450
50
150
250
0
0.1
0.2
Diode Forward Voltage, VSD– V
0.3
0.5
0.4
0.6
0.7
0.8
0.9
1.0
0.001
0.01
0.1
10
1.0
C
Total Gate Charge, Qg
nC
G
Drain Current, ID– A
S
D
Ta=25C
Single pulse
Ambient Temperature, Ta –
°
C
A
F
S
O
相關(guān)PDF資料
PDF描述
2SK2911 Ultrahigh-Speed Switching Applications
2SK2912 Silicon N Channel MOS FET High Speed Power Switching
2SK2912L Silicon N Channel MOS FET High Speed Power Switching
2SK2912S Silicon N Channel MOS FET High Speed Power Switching
2SK2919 Ultrahigh-Speed Switching Applications
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2912L 制造商:Renesas Electronics Corporation 功能描述:
2SK2912L-E 制造商:Renesas Electronics Corporation 功能描述:
2SK2912S(TR-E) 制造商:Renesas Electronics Corporation 功能描述:
2SK2914 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 7.5A 3PIN TO-220 - Rail/Tube
2SK2914(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 7.5A 3-Pin (3+Tab) TO-220AB 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 7.5A TO-220AB