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參數(shù)資料
| 型號： | 2SK2905-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-CHANNEL SILICON POWER MOS-FET |
| 中文描述： | 70 A, 60 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 99K |
| 代理商： | 2SK2905-01R |
1
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Maximum Avalanche Energy
Max. power dissipation
Operating and storage
temperature range
Symbol
V
DS
I
D
I
D(puls]
V
GS
E
AV *1
P
D
T
ch
T
stg
Rating
Unit
V
A
A
V
mJ
W
°C
°C
60
±70
±280
±30
1111.1
100
+150
-55 to +150
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK2905-01R
N-CHANNEL SILICON POWER MOS-FET
FUJI POWER MOS-FET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Gate(G)
Source(S)
Drain(D)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
DS
=60V
V
ch
=25°C
V
GS
=0V T
ch
=125°C
=±30V
DS
=0V
V
GS
I
D
=40A V
GS
=10V
I
D
=40A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=30V I
D
=80A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
60
2.5
3.0
10
0.2
10
9.5
20
40
3100
1300
350
20
85
88
65
70
1.0
70
0.13
V
V
μA
mA
nA
m
S
pF
A
V
ns
μC
ns
Min. Typ. Max. Units
Thermal resistance
1.25
30.0
°C/W
°C/W
Symbol
BV
DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
=10mA V
DS
=V
GS
L=100 μH T
ch
=25°C
I
F
=50A V
GS
=0V T
ch
=25°C
I
F
=50A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
*1 L=0.302mH, Vcc=24V
3.5
500
1.0
100
12
4650
1950
530
30
120
130
120
1.5
TO-3PF
1. Gate
2. Drain
3. Source
2
15.5
5
9
5.45
5.45
5.5
3.2
2
1.6
3.5
1.1
2.1
2
0.6
±
0
±
0
±
0
±
0
±
0.3
±
0.3
±
0.2
±
0.2
±
0.2
±
0.3
±
0.3
+0.2
+0.3
+0.2
±
0.2
3.2
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