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參數(shù)資料
| 型號(hào)： | 2SK2857 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 中文描述： | N溝道MOS場(chǎng)效應(yīng)晶體管高速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | 2SK2857 |
Data Sheet D11648EJ2V0DS00
2
2SK2857
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-off Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0 V
±10
μ
A
Gate Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.4
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 2 A
1
S
R
DS(on)1
V
GS
= 4 V, I
D
= 1.5 A
150
220
m
Drain to Source On-state Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 2.5 A
110
150
m
Input Capacitance
C
iss
265
pF
Output Capacitance
C
oss
125
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
56
pF
Turn-on Delay Time
t
d(on)
8
ns
Rise Time
t
r
11
ns
Turn-off Delay Time
t
d(off)
52
ns
Fall Time
t
f
V
DD
= 25 V, I
D
= 1 A
V
GS(on)
= 10 V, R
G
= 10
R
L
= 25
22
ns
Total Gate Charge
Q
G
10.6
nC
Gate to Source Charge
Q
GS
0.7
nC
Gate to Drain Charge
Q
GD
V
DS
= 48 V
V
GS
= 10 V
I
D
= 4 A
3.5
nC
Diode Forward Voltage
V
F(S-D)
I
F
= 4 A, V
GS
= 0 V
0.86
V
Reverse Recovery Time
t
rr
49
ns
Reverse Recovery Charge
Q
rr
I
F
= 4 A, V
GS
= 0 V
di/dt = 50 A /
μ
s
26.6
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
PG.
R
0
V
GS
D.U.T.
R
L
V
DD
τ
= 1 s
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
10 %
90 %
V
GS(on)
10 %
0
I
D
90 %
90 %
t
d(on)
t
r
t
d(off)
t
f
10 %
τ
R
G
= 10
I
D
0
t
on
t
off
PG.
50
D.U.T.
R
L
V
DD
I
G
= 2 mA
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