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參數(shù)資料
| 型號： | 2SK2857-AZ |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 4000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 62K |
| 代理商： | 2SK2857-AZ |
Data Sheet D11648EJ2V0DS00
4
2SK2857
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
1
0.1
10
20
ID - Drain Current - A
R
DS(on)
-
Drain
to
Source
On-State
Resistance
-
m
0
TA = 125C
75C
25C
80
120
160
200
240
40
VGS = 10 V
0
200
400
600
800
1000
2
4
6
810
12
14
16
R
DS
(on)
-Drain
to
Source
On-state
Resistance
-
m
VGS - Gate to Source Voltage - V
ID = 2.5 A
1.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1
10
100
1000
100
10
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
,C
oss
,C
rss
-
Capacitance
-
pF
VDS - Drain Source Voltage - V
Ciss
Coss
Crss
f = 1 MHz
0.1
1
10
ID - Drain Current - A
td
(on)
,tr,
td
(off)
,tf
-
Swwitchig
Time
-
ns
1000
100
10
0.1
td(off)
td(on)
tf
tr
SWITCHING CHARACTERISTICS
0.1
1
10
20
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VGS = 0 V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
IF
-
Source
to
Drain
Current
-
A
VF(S-D) - Source to Drain Voltage - V
Qg - Gate Charge - nC
V
DS
-Drain
to
Source
Voltage
-
V
08
412
6
210
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
V
GS
-Gate
to
Source
Voltage
-
V
VGS
VDS
ID = 4 A
10
20
30
40
50
60
0
2
4
6
8
10
12
VDD = 12 V
30 V
48 V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2857-T1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2857-T1-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 4A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2858-T1(A) | 制造商:Renesas Electronics 功能描述:Nch 30V 100mA 5 SC70 Tape & Reel |
| 2SK2862 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 3A 3PIN TO-220(NIS) - Rail/Tube |
| 2SK2862(Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220NIS |
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