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參數(shù)資料
| 型號： | 2SK2846 |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-8M1B, 3 PIN |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 407K |
| 代理商： | 2SK2846 |
2SK2846
2004-07-06
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
—
±10
A
Gatesource breakdown voltage
V (BR) GSS
ID = ±10 A, VGS = 0 V
±30
—
V
Drain cutoff current
IDSS
VDS = 600 V, VGS = 0 V
—
100
A
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
600
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
—
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 1 A
—
4.2
5.0
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 1 A
0.8
1.7
—
S
Input capacitance
Ciss
—
380
—
Reverse transfer capacitance
Crss
—
40
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
120
—
pF
Rise time
tr
—
15
—
Turnon time
ton
—
25
—
Fall time
tf
—
20
—
Switching time
Turnoff time
toff
—
80
—
ns
Total gate charge (gatesource
plus gatedrain)
Qg
—
9
—
Gatesource charge
Qgs
—
5
—
Gatedrain (“miller”) Charge
Qgd
VDD ≈ 480 V, VGS = 10 V, ID = 2 A
—
4
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
2
A
IDRP
t = 1 ms
—
5
A
Pulse drain reverse current
(Note 1)
IDRP
t = 100 s
—
8
A
Forward voltage (diode)
VDSF
IDR = 2 A, VGS = 0 V
—
1.5
V
Reverse recovery time
trr
—
1000
—
ns
Reverse recovery charge
Qrr
IDR = 2 A, VGS = 0 V
dIDR / dt = 100 A / s
—
3.5
—
C
Marking
K2846
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Part No. (or abbreviation code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2846(TP,Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin TPS T/R |
| 2SK2847 | 功能描述:MOSFET N-CH 900V 8A TO-3PN RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK2847(F) | 功能描述:MOSFET N-ch 900V 8A 1.1 ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2847F | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 8A 3-Pin(3+Tab) TO-3P(N)IS |
| 2SK2847LBMAT | 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR |
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