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參數(shù)資料
| 型號： | 2SK2838(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 426K |
| 代理商： | 2SK2838(2-10S1B) |
2SK2838
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
―
±10
μA
Gatesource breakdown voltage
V (BR) GSS
IG = ±10 μA, VDS = 0 V
±30
―
V
Drain cutoff current
IDSS
VDS = 400 V, VGS = 0 V
―
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
400
―
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
―
4.0
V
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 3 A
―
0.84
1.2
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 3 A
2.0
4.4
―
S
Input capacitance
Ciss
―
720
―
Reverse transfer capacitance
Crss
―
80
―
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
―
250
―
pF
Rise time
tr
―
15
―
Turnon time
ton
―
30
―
Fall time
tf
―
25
―
Switching time
Turnoff time
toff
―
110
―
ns
Total gate charge (gatesource
plus gatedrain)
Qg
―
17
―
Gatesource charge
Qgs
―
10
―
Gatedrain (“miller”) Charge
Qgd
VDD=320 V, VGS = 10 V, ID = 5.5 A
―
7
―
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
―
5.5
A
Pulse drain reverse current
(Note 1)
IDRP
―
22
A
Forward voltage (diode)
VDSF
IDR = 5.5 A, VGS = 0 V
―
1.7
V
Reverse recovery time
trr
―
350
―
ns
Reverse recovery charge
Qrr
IDR = 5.5 A, VGS = 0 V,
dIDR / dt = 100 A / μs
―
2.1
―
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2838
Part No. (or brevity code)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2838-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2841 | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2841(F) | 功能描述:MOSFET N-Ch 400V 10A Rdson 0.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2842 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 12A 3PIN TO-220(NIS) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 500V 12A 3-Pin(3+Tab) TO-220NIS |
| 2SK2842(Q,T) | 功能描述:MOSFET MOSFET N-Ch 500V 12A Rdson 0.52 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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