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參數(shù)資料
| 型號： | 2SK2800 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 52K |
| 代理商： | 2SK2800 |
2SK2800
3
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage
60
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 20A, V
GS
= 10V
Note4
I
D
= 20A, V
GS
= 4V
Note4
I
D
= 20A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
V
(BR)GSS
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
±
20
—
—
V
Gate to source leak current
—
—
±
10
μ
A
μ
A
Zero gate voltege drain current
—
—
10
Gate to source cutoff voltage
1.5
—
2.5
V
Static drain to source on state
—
15
20
m
m
resistance
—
25
40
Forward transfer admittance
20
35
—
S
Input capacitance
—
1500
—
pF
Output capacitance
Coss
—
720
—
pF
Reverse transfer capacitance
Crss
—
200
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
20
—
ns
I
D
= 20A, R
L
= 1.5
V
GS
= 10V
Rise time
—
180
—
ns
Turn-off delay time
—
200
—
ns
Fall time
—
200
—
ns
Body–drain diode forward voltage
—
0.95
—
V
I
F
= 40A, VGS = 0
I
= 40A, VGS = 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
70
—
V
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
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