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參數(shù)資料
| 型號(hào)： | 2SK2751 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Silicon N-Channel Junction FET |
| 中文描述： | 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 2SK2751 |
1
Silicon Junction FETs (Small Signal)
2SK2751
Silicon N-Channel J unction FET
unit: mm
For impedance conversion in low frequency
For pyroelectric sensor
I
Features
G
Low noise-figure (NF)
G
High gate to drain voltage V
GDO
G
Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I
Electrical Characteristics
(Ta = 25 ± 3°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Symbol
I
DSS
I
GSS
V
GDS
V
GSC
| Y
fs
|
C
iss
C
oss
C
rss
Conditions
V
DS
= 10V, V
GS
= 0
V
GS
=
20V, V
DS
= 0
I
G
=
100
μ
A, V
DS
= 0
V
DS
= 10V, I
D
= 1
μ
A
V
DS
= 10V, I
D
= 1
μ
A, f = 1kHz
V
DS
= 10V, V
GS
= 0, f = 1MHz
min
1.4
40
2.5
max
4.7
1
3.5
Unit
mA
nA
V
V
mS
pF
pF
pF
Note: The test method to comply with JISC7030, Field effect transistor test method.
typ
5
1
1
1: Source
2: Drain
3: Gate
JEDEC: TO-236
EIAJ: SC-59
Mini Type Package (3-pin)
Marking Symbol: HS
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15
0.65±0.15
3
1
2
0
0
1
0
+
–
1
+
–
0
0.4±0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
I
Absolute Maximum Ratings
(Ta = 25°C)
Parameter
Gate to Drain voltage
Drain current
Gate current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
V
GDS
I
D
I
G
P
D
T
ch
T
stg
Ratings
40
10
2
200
150
55 to +150
Unit
V
mA
mA
mW
°C
°C
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