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參數(shù)資料
| 型號： | 2SK2679 |
| 元件分類： | JFETs |
| 英文描述： | 5.5 A, 400 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10R1B, SC-67, 3 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 392K |
| 代理商： | 2SK2679 |
2SK2679
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2679
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 0.84 (typ.)
High forward transfer admittance
: |Yfs| = 4.4 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 400 V)
Enhancementmode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
400
V
Draingate voltage (RGS = 20 k)
VDGR
400
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
5.5
A
Drain current
Pulse (Note 1)
IDP
22
A
Drain power dissipation (Tc = 25°C)
PD
35
W
Single pulse avalanche energy
(Note 2)
EAS
223
mJ
Avalanche current
IAR
5.5
A
Repetitive avalanche energy (Note 3)
EAR
3.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
3.57
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 12 mH, RG = 25 , IAR = 5.5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK2679(Q) | 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS 制造商:Toshiba 功能描述:Nch 400V 5.5A 1.2@10V TO220NIS Bulk |
| 2SK2679(Q,T) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2679T | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 400V 5.5A 3PIN SC-67 - Rail/Tube |
| 2SK2682 | 制造商:Distributed By MCM 功能描述:1Ch 250W 13A 35W Gds Sanyo Fet Transistor TO-220Ab |
| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
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