參數(shù)資料
型號： 2SK2655-01R
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TO-3PF, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 348K
代理商： 2SK2655-01R
N-channel MOS-FET
900V
2
> Characteristics
2SK2655-01R
FAP-IIS Series
8A
100W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=4A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance vs. I
D
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances vs. V
DS
C=f(V
DS
); V
GS
=0V; f=1MHz
Avalanche Energy Derating
E
as
=f(starting T
ch
); V
CC
=90V; I
AV
=8A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
E
↑
I
F
7
8
9
V
DS
[V]
→
Starting T
ch
[°C]
→
V
SD
[V]
→
Allowable Power Dissipation vs. T
C
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch
=f(t) parameter:D=t/T
↑
P
D
10
↑
I
D
12
T
c
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相關(guān)PDF資料
PDF描述
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2SK2663 HVX-2 Series Power MOSFET(900V 1A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2655-01RSC 制造商:Fuji Electric 功能描述:
2SK2661 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220 - Rail/Tube
2SK2661(F) 制造商:Toshiba 功能描述:Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,500V/5A/1.5ohm,TO-220AB
2SK2662 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR PANASONIC
2SK2662(Q) 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 500V 5A 3PIN TO-220(NIS) - Rail/Tube
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