參數(shù)資料
型號(hào): 2SK2593R
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: 30 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
封裝: SC-89, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 195K
代理商: 2SK2593R
264
Silicon Junction FETs (Small Signal)
unit: mm
2SK2593
Silicon N-Channel Junction FET
For low-frequency amplification
For switching
I Features
G Low noies, high gain
G High gate to drain voltage V
GDO
G Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source voltage
Gate to Drain voltage
Gate to Source voltage
Drain current
Gate current
Allowable power dissipation
Junction temperature
Storage temperature
Symbol
VDSX
VGDO
VGSO
ID
IG
PD
Tj
Tstg
Ratings
55
±30
10
125
55 to +125
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Gate to Drain voltage
Gate to Source cut-off voltage
Forward transfer admittance
Input capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Noise figure
Symbol
IDSS*
IGSS
VGDS
VGSC
| Yfs |
Ciss
Crss
NF
Conditions
VDS = 10V, VGS = 0
VGS =
30V, V
DS = 0
IG = 100A, VDS = 0
VDS = 10V, ID = 10
A
VDS = 10V, ID = 5mA, f = 1kHz
VDS = 10V, VGS = 0, f = 1MHz
VDS = 10V, VGS = 0, Rg = 100k
f = 100Hz
min
1
55
2.5
max
20
10
5
Unit
mA
nA
V
mS
pF
dB
typ
80
7.5
6.5
1.9
2.5
Marking Symbol (Example): 2B
* IDSS rank classification
Runk
IDSS (mA)
Marking Symbol
P
1 to 3
2BP
Q
2 to 6.5
2BQ
R
5 to 12
2BR
1: Source
2: Drain
EIAJ: SC-89
3: Gate
SSMini3-F2 Package
S
10 to 20
2BS
0.28±0.05
3
12
0.28±0.05
(0.80)
1.60
+0.05
– 0.03
0.12
+0.05
– 0.02
0.60
+0.05
– 0.03
(0.80)
(0.51)
0
to
0.1
(0.15)
(0.44)
0.88
(0.375)
+0.05
–0.03
0.80
±0.05
(0.80)
1.60
±0.05
3
°
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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