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參數(shù)資料
| 型號(hào)： | 2SK2586 |
| 元件分類： | JFETs |
| 英文描述： | 60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, 3 PIN |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大小： | 31K |
| 代理商： | 2SK2586 |
2SK2586
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
—
V
I
D = 10 mA, VGS = 0
Gate to source breakdown
voltage
V
(BR)GSS
±20
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16 V, VDS = 0
Zero gate voltage drain current I
DSS
—
100
AV
DS = 60 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.0
V
I
D = 1 mA, VDS = 10 V
Static drain to source on state
resistance
R
DS(on)
—
7
10
m
I
D = 30 A
V
GS = 10 V*
1
—1016
m
I
D = 30 A
V
GS = 4 V*
1
Forward transfer admittance
|y
fs|35
60
—
S
I
D = 30 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
3550
—
pF
V
DS = 10 V
Output capacitance
Coss
—
1760
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
500
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
35
—
ns
I
D = 30 A
Rise time
t
r
—
260
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
480
—
ns
R
L = 1.0
Fall time
t
f
—
370
—
ns
Body to drain diode forward
voltage
V
DF
—
0.94
—
V
I
F = 60 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
140
—
ns
I
F = 60 A, VGS = 0
diF / dt = 50 A /
s
Note:
1. Pulse Test
See characteristic curves of 2SK2529.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2586(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine |
| 2SK2586-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,60A,7ohm,TO-3P |
| 2SK2588 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK258H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-3 |
| 2SK2590 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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