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參數(shù)資料
| 型號： | 2SK2570 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET Low Frequency Power Switching |
| 中文描述： | 硅N溝道場效應(yīng)晶體管低頻功率開關(guān) |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 40K |
| 代理商： | 2SK2570 |
2SK2570
4
0.5
0.4
0.3
0.2
0.1
0
2
4
6
8
10
5
2
1
0.2
0.5
0.1
2.5
2.0
1.5
1.0
0.5
–40
0
40
80
120
160
0
0.5
0.2
0.1
0.02
0.05
0.01
0.005
I = 0.2 A
V = 2.5 V
4 V
0.05, 0.1, 0.2 A
I = 0.2 A
0.1 A
0.05 A
0.01
0.02
0.05
0.1
0.2
0.5
V = 2.5 V
4 V
0.05, 0.1A
1
25
°
C
Tc = –25
°
C
75
°
C
Gate to Source Voltage V (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
V
D
D
Drain Current I (A)
D
R
D
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
°
C)
R
D
S
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I (A)
F
f
Forward Transfer Admittance vs.
Drain Current
Pulse Test
Pulse Test
Pulse Test
V = 10 V
Pulse Test
0.002
0.005 0.01 0.02
0.05
0.1
0.2
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PDF描述 |
|---|---|
| 2SK2597 | N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION |
| 2SK2623 | Ultrahigh-Speed Switching Applications |
| 2SK2624LS | Ultrahigh-Speed Switching Applications |
| 2SK2628LS | Ultrahigh-Speed Switching Applications |
| 2SK2632LS | 醣馱彳檳 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2570ZL(TL-E) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2570ZL-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Low Frequency Power Switching |
| 2SK2570ZL-TR-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET Low Frequency Power Switching |
| 2SK2571 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET |
| 2SK2572 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-247VAR |
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