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參數(shù)資料
| 型號： | 2SK2553(S) |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LDPAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 41K |
| 代理商： | 2SK2553(S) |
Application
High speed power switching
Features
Low on–resistance
RDS(on) = 7 m typ.
High speed switching
4 V gate drive device can be driven from
5 V souece
Table 1 Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
———————————————————————————————————————————
Drain to source voltage
VDSS
60
V
———————————————————————————————————————————
Gate to source voltage
VGSS
±20
V
———————————————————————————————————————————
Drain current
ID
50
A
———————————————————————————————————————————
Drain peak current
ID(pulse)*
200
A
———————————————————————————————————————————
Body–drain diode reverse drain current
IDR
50
A
———————————————————————————————————————————
Avalanche current
IAP***
45
A
———————————————————————————————————————————
Avalanche energy
EAR***
174
mJ
———————————————————————————————————————————
Channel dissipation
Pch**
75
W
———————————————————————————————————————————
Channel temperature
Tch
150
°C
———————————————————————————————————————————
Storage temperature
Tstg
–55 to +150
°C
———————————————————————————————————————————
*
PW
≤ 10 s, duty cycle ≤ 1 %
**
Value at Tc = 25°C
*** Value at Tch = 25°C, Rg
≥ 50
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
1
2
3
4
LDPAK
1
2
3
2SK2553
Silicon N Channel MOS FET
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| 2SK2553S | 50 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2553STL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2554 | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P Cut Tape |
| 2SK2554-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2555 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2556 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
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