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參數(shù)資料
| 型號： | 2SK2552J5 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | USM, SC-75, 3 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 46K |
| 代理商： | 2SK2552J5 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
JUNCTION FIELD EFFECT TRANSISTOR
2SK2552
N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
FOR IMPEDANCE CONVERTER OF ECM
DATA SHEET
Document No.
D15941EJ1V0DS00 (1st edition)
Date Published
January 2002 NS CP(K)
Printed in Japan
DESCRIPTION
The 2SK2552 is suitable for converter of ECM.
FEATURES
Compact package
High forward transfer admittance
1000
S TYP. (IDSS = 100 A)
1600
S TYP. (IDSS = 200 A)
Includes diode and high resistance at G - S
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2552
SC-75 (USM)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
Note1
VDSX
20
V
Gate to Drain Voltage
VGDO
–20
V
Drain Current
ID
10
mA
Gate Current
IG
10
mA
Total Power Dissipation
Note2
PT
200
mW
Junction Temperature
Tj
125
°C
Storage Temperature
Tstg
–55 to +125
°C
Notes 1. VGS = –1.0 V
2. Mounted on ceramic substrate of 3.0 cm
2 x 0.64 mm
Remark
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
1.6
±
0.1
0.8
±
0.1
D
0.2
+0.1
–0
0.5
1.0
1.6 ± 0.1
G
S
0.6
0.75 ± 0.05
0 to 0.1
0.1
+0.1
–0.05
EQUIVALENT CIRCUIT
Source
Gate
Drain
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
| 2SK2553(S) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-263VAR |
| 2SK2553L | 制造商:Renesas Electronics Corporation 功能描述: |
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