參數(shù)資料
型號(hào): 2SK2525-01
廠商: FUJI ELECTRIC CO LTD
元件分類: JFETs
英文描述: XTAL CER SMT 6X3.5 2PAD
中文描述: 9 A, 450 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝: SC-65, TO-3P, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大?。?/td> 193K
代理商: 2SK2525-01
N-channel MOS-FET
450V
1
> Characteristics
2SK2525-01
FAP-II Series
9A
80W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance
R
DS(on)
= f(T
ch
); I
D
=4,5A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
I
D
R
D
]
I
D
1
2
3
V
DS
[V]
T
ch
[°C]
V
GS
[V]
Typical Drain-Source On-State-Resistance
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
R
D
]
g
f
V
G
4
5
6
I
D
[A]
I
D
[A]
T
ch
[°C]
Typical Capacitances
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristics
V
GS
=f(Qg); I
D
=9A, Tc=25°C
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test; V
GS
=0V
C
V
D
V
G
I
F
7
8
9
V
DS
[V]
Qg [nC]
V
SD
[V]
Power Dissipation
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
Z
t
Transient Thermal impedance
Z
thch-c
=f(t) parameter:D=t/T
P
D
[
10
I
D
12
T
ch
[°C]
V
DS
[V]
t [s]
Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98
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