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參數(shù)資料
| 型號： | 2SK2514 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 114K |
| 代理商： | 2SK2514 |
2SK2514
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)1
11
15
V
GS
= 10 V, I
D
= 25 A
Drain to Source On-Resistance
R
DS (on)2
16
23
V
GS
= 4 V, I
D
= 25 A
Gate to Source Cutoff Voltage
V
GS (off)
1.0
1.5
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
15
V
DS
= 10 V, I
D
= 25 A
Drain Leakage Current
I
DSS
10
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
10
V
GS
=
±
20 V, V
DS
= 0
Input Capacitance
C
iss
2 100
V
DS
= 10 V
Output Capacitance
C
oss
1 100
V
GS
= 0
Reverse Transfer Capacitance
C
rss
500
f = 1 MHz
Turn-On Delay Time
t
d (on)
45
I
D
= 25 A
Rise Time
t
r
390
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d (off)
320
V
DD
= 30 V
Fall Time
t
f
360
R
G
= 10
Total Gate Charge
Q
G
92
I
D
= 50 A
Gate to Source Charge
Q
GS
6.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
37
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
1.0
I
F
= 50 A, V
GS
= 0
Reverse Recovery Time
t
rr
90
I
F
= 50 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
175
di/dt = 100 A/
μ
s
UNIT
m
m
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Circuit 2 Gate Charge
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 1 Switching Time
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
V
GS
0
t = 1 s
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 2SK2514-A | 制造商:Renesas Electronics 功能描述:Nch 60V 50A 15m@10V TO3P 制造商:Renesas Electronics 功能描述:Nch 60V 50A 15m@10V TO3P Bulk |
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