參數(shù)資料
型號(hào): 2SK2512
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 3/8頁(yè)
文件大?。?/td> 82K
代理商: 2SK2512
2SK2512
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
1
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature - C
d
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature - C
P
T
0
20
0
20
40
60
80
100
120
140
160
20
40
60
80
100
40
60
80
100
120
140
160
70
60
50
40
30
20
10
1
0.1
10
100
1000
1
10
100
T
= 25 C
Single Pulse
0
2
3
4
100
10
100
1 000
Pulsed
200
1
0
Pulsed
2
4
6
V
GS
= 20 V
V
GS
= 4 V
V
GS
= 10 V
8
T
A
= 125 C
75 C
25 C
–25 C
R
DSon
Lmted
I
D(DC)
I
D(pulse)
10ms
DC
V
DS
= 10 V
PW=100 s
μ
200ms
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2SK2514 Switching N-channel power MOS FET industrial use
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