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參數(shù)資料
| 型號： | 2SK2498 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 131K |
| 代理商： | 2SK2498 |
2SK2498
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)1
7.3
9.0
m
V
GS
= 10 V, I
D
= 25 A
R
DS (on)2
11
14
m
V
GS
= 4 V, I
D
= 25 A
Gate to Source Cutoff Voltage
V
GS (off)
1.0
1.5
2.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
20
58
S
V
DS
= 10 V, I
D
= 25 A
Drain Leakage Current
I
DSS
10
μ
A
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
10
nA
V
GS
=
±
20 V, V
DS
= 0
Input Capacitance
C
iss
3400
pF
V
DS
= 10 V
Output Capacitance
C
oss
1600
pF
V
GS
= 0
Reverse Transfer Capacitance
C
rss
770
pF
f = 1 MHz
Turn-On Delay Time
t
d (on)
55
ns
I
D
= 25 A
Rise Time
t
r
360
ns
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d (off)
480
ns
V
DD
= 30 V
Fall Time
t
f
360
ns
R
G
= 10
Total Gate Charge
Q
G
152
nC
I
D
= 50 A
Gate to Source Charge
Q
GS
11
nC
V
DD
= 48 V
Gate to Drain Charge
Q
GD
60
nC
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
0.92
V
I
F
= 50 A, V
GS
= 0
Reverse Recovery Time
t
rr
105
ns
I
F
= 50 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
265
μ
C
di/dt = 100 A/
μ
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
V
GS
= 20
→
0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
Test Circuit 3 Gate Charge
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
PG.
R
G
= 10
D.U.T.
R
L
V
DD
R
G
V
GS
0
t = 1 s
Duty Cycle
≤
1 %
V
GS
Wave Form
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
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PDF描述 |
|---|---|
| 2SK2503 | Small switching (60V, 5A) |
| 2SK2504 | Small switching (100V, 5A) |
| 2SK2510 | Switching N-channel power MOS FET industrial use |
| 2SK2511 | Switching N-channel power MOS FET industrial use |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2498(01)-S6 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2498-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 50A 9m@10V IsolatedTO220 Cut Tape 制造商:Renesas Electronics 功能描述:Nch 60V 50A 9m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Isolated |
| 2SK2499 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2499(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2499-Z | 制造商:Renesas Electronics Corporation 功能描述: |
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