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參數(shù)資料
| 型號(hào)： | 2SK2482 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-88, 3 PIN |
| 文件頁(yè)數(shù)： | 1/3頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 2SK2482 |
MOS FIELD EFFECT TRANSISTOR
DESCRIPTION
The 2SK2482 is N-Channel MOS Field Effect Transistor designed
for high voltage switching applications.
FEATURES
Low On-Resistance
RDS (on) = 4.0
(VGS = 10 V, ID = 3.0 A)
Low Ciss
Ciss = 900 pF TYP.
High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 C)
Drain to Source Voltage
VDSS
900
V
Gate to Source Voltage
VGSS
±30
V
Drain Current (DC)
ID (DC)
±5.0
A
Drain Current (pulse)*
ID (pulse)
±12
A
Total Power Dissipation (Tc = 25 C)
PT1
100
W
Total Power Dissipation (TA = 25 C)
PT2
3.0
W
Channel Temperature
Tch
150
C
Storage Temperature
Tstg
–55 to +150 C
Single Avalanche Current**
IAS
5.0
A
Single Avalanche Energy**
EAS
73.5
mJ
*
PW
≤ 10
s, Duty Cycle ≤ 1 %
** Starting Tch = 25 C, RG = 25
, VGS = 20 V → 0
2SK2482
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
Document No. D10274EJ1V0DS00 (1st edition)
Date Published August 1995 P
Printed in Japan
PACKAGE DIMENSIONS
(in millimeter)
1.0±0.2
123
1. Gate
2. Drain
3. Source
4. Fin (Drain)
MP-88
4
15.7 MAX.
3.2±0.2
2.8±0.1
0.6±0.1
2.2±0.2
5.45
4.7 MAX.
1.5
1.0
6.0
7.0
19
MIN.
20.0±0.2
3.0±0.2
4.5±0.2
Body
Diode
Source
Drain
Gate
1995
DATA SHEET
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| 2SK2486 | 7 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
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| 2SK2507 | 25 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2482-A | 制造商:Renesas Electronics 功能描述:Nch 900V 5A 4000m@10V TO3P 制造商:Renesas Electronics 功能描述:Nch 900V 5A 4000m@10V TO3P Bulk |
| 2SK2483 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2484 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistors |
| 2SK2484-Z(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2485 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
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