- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49998 > 2SK2461 20 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2461 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MP-45F, ISOLATED TO-220, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 212K |
| 代理商： | 2SK2461 |
2SK2461
2
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
RDS(on)1
58
80
VGS = 10 V, ID = 10 A
Drain to Source On-Resistance
RDS(on)2
70
100
VGS = 4 V, ID = 10 A
Gate to Source Cutoff Voltage
VGS(off)
1.0
1.7
2.0
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
12
19
VDS = 10 V, ID = 10 A
Drain Leakage Current
IDSS
10
VDS = 100 V, VGS = 0
Gate to Source Leakage Current
IGSS
±10
VGS =
±20 V, VDS = 0
Input Capacitance
Ciss
1400
VDS = 10 V
Output Capacitance
Coss
470
VGS = 0
Reverse Transfer Capacitance
Crss
150
f = 1 MHz
Turn-On Delay Time
td(on)
21
ID = 10 A
Rise Time
tr
110
VGS(on) = 10 V
Turn-Off Delay Time
td(off)
140
VDD = 50 V
Fall Time
tf
110
RG = 10
Total Gate Charge
QG
51
ID = 20 A
Gate to Source Charge
QGS
4.9
VDD = 80 V
Gate to Drain Charge
QGD
15
VGS = 10 V
Body Diode Forward Voltage
VF(S-D)
1.1
IF = 20 A, VGS = 0
Reverse Recovery Time
trr
170
IF = 20 A, VGS = 0
Reverse Recovery Charge
Qrr
770
di/dt = 100 A/
s
Test Circuit 3 Gate Charge
VGS = 20
→ 0 V
PG.
RG = 25
50
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 s
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
UNIT
m
m
V
S
A
pF
ns
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2462 | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2462-AZ | 15 A, 100 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 |
| 2SK2467-Y | 9 A, 180 V, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2476 | 3 A, 800 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2480 | 3 A, 900 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2461-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 20A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK2462 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2462-AZ | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 100V 15A 3-Pin(3+Tab) TO-220 Bulk |
| 2SK2463 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (60V, 2A) |
| 2SK2463T100 | 功能描述:MOSFET TRANS MOSFET N-CH 60V 2A TR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。