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參數(shù)資料
| 型號(hào)： | 2SK2446 |
| 廠商： | FUJI ELECTRIC HOLDINGS CO., LTD. |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | N溝道場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | 2SK2446 |
N-channel MOS-FET
100V
0,055
> Characteristics
2SK2446-L,S
F-III Series
30A
80W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance vs. T
ch
R
DS(on)
= f(T
ch
); I
D
=15A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
↑
R
D
]
↑
I
D
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance vs. I
D
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Transconductance
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristic
V
GS
=f(Qg); I
D
=30A
Forward Characteristics of Reverse Diode
I
=f(V
SD
); 80μs pulse test; V
GS
=0V
↑
C
↑
V
D
↑
V
G
↑
I
F
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Power Dissipation
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch-c
=f(t) parameter:D=t/T
↑
P
D
10
↑
I
D
12
T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
This specification is subject to change without notice!
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2446-L | N-channel MOS-FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2446-01L | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-262VAR |
| 2SK2446-01S | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-252VAR |
| 2SK2446-L | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2446-S | 制造商:FUJI 制造商全稱(chēng):Fuji Electric 功能描述:N-channel MOS-FET |
| 2SK2459 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 5A I(D) | SOT-186 |
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