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參數(shù)資料
| 型號(hào)： | 2SK2415-Z |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | 2SK2415-Z |
2SK2415, 2SK2415-Z
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-State Resistance
R
DS(on)1
0.07
0.10
V
GS
= 10 V, I
D
= 4.0 A
Drain to Source On-State Resistance
R
DS(on)2
0.10
0.15
V
GS
= 4 V, I
D
= 4.0 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.6
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
5.0
8.4
V
DS
= 10 V, I
D
= 4.0 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
10
V
GS
=
±
20 V, V
DS
= 0
Input Capacitance
C
iss
570
V
DS
= 10 V
Output Capacitance
C
oss
290
V
GS
= 0
Reverse Transfer Capacitance
C
rss
75
f = 1 MHz
Turn-On Delay Time
t
d(on)
5
I
D
= 4.0 A
Rise Time
t
r
60
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
75
V
DD
= 30 V
Fall Time
t
f
40
R
G
= 10
Total Gate Charge
Q
G
21
I
D
= 8.0 A
Gate to Source Charge
Q
GS
2.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
6.5
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
85
I
F
= 8.0 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
200
di/dt = 100 A/
μ
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
UNIT
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
R
G
= 25
50
D.U.T.
PG
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
V
DD
R
G
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle 1 %
V
GS
Wave
Form
I
D
Wave
Form
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
V
GS
R
G
= 10
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
Test Circuit 3 Gate Charge
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