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參數(shù)資料
| 型號： | 2SK2410 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 113K |
| 代理商： | 2SK2410 |
2SK2410
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS(on)1
31
40
V
GS
= 10 V, I
D
= 15 A
Drain to Source On-Resistance
R
DS(on)2
40
60
V
GS
= 4 V, I
D
= 15 A
Gate to Source Cutoff Voltage
V
GS(off)
1.0
1.5
2.0
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
15
27
V
DS
= 10 V, I
D
= 15 A
Drain Leakage Current
I
DSS
10
V
DS
= 60 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
10
V
GS
=
±
20 V, V
DS
= 0
Input Capacitance
C
iss
1500
V
DS
= 10 V
Output Capacitance
C
oss
720
V
GS
= 0
Reverse Transfer Capacitance
C
rss
190
f = 1 MHz
Turn-On Delay Time
t
d(on)
22
I
D
= 15 A
Rise Time
t
r
260
V
GS(on)
= 10 V
Turn-Off Delay Time
t
d(off)
130
V
DD
= 30 V
Fall Time
t
f
150
R
G
= 10
Total Gate Charge
Q
G
50
I
D
= 30 A
Gate to Source Charge
Q
GS
5.0
V
DD
= 48 V
Gate to Drain Charge
Q
GD
15
V
GS
= 10 V
Body Diode Forward Voltage
V
F(S-D)
1.1
I
F
= 30 A, V
GS
= 0
Reverse Recovery Time
t
rr
110
I
F
= 30 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
320
di/dt = 100 A/
μ
s
Test Circuit 1 Avalanche Capability
Test Circuit 2 Switching Time
R
G
= 25
50
PG
L
V
DD
V
GS
= 20
→
0 V
BV
DSS
I
AS
I
D
V
DS
Starting T
ch
R
G
= 10
D.U.T.
PG.
0
t
R
L
V
DD
V
GS
t = 1 s
Duty Cycle
≤
1 %
I
D
0
0
10 %
10 %
90 %
90 %
10 %
90 %
I
D
V
GS (on)
t
d (off)
t
d (on)
t
on
t
off
t
f
t
r
Test Circuit 3 Gate Charge
D.U.T.
R
L
V
DD
50
I
G
= 2 mA
PG.
V
DD
V
GS
R
G
D.U.T.
V
GS
Wave
Form
I
D
Wave
Form
UNIT
m
m
V
S
μ
A
μ
A
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
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PDF描述 |
|---|---|
| 2SK2412 | Switching N-channel power MOS FET industrial use |
| 2SK2413 | Switching N-channel power MOS FET industrial use |
| 2SK2414 | Switching N-channel power MOS FET industrial use |
| 2SK2414-Z | Switching N-channel power MOS FET industrial use |
| 2SK2415 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2410-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 30A 40m@10V IsolatedTO220 制造商:Renesas Electronics 功能描述:Nch 60V 30A 40m@10V IsolatedTO220 Bulk |
| 2SK2411 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-220AB |
| 2SK2411-Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB |
| 2SK2412 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2412-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 20A 70m@10V IsolatedTO220 Bulk 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(3+Tab) TO-220 Isolated |
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