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參數(shù)資料
| 型號(hào)： | 2SK2376(2-10S2B) |
| 元件分類： | JFETs |
| 英文描述： | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S2B, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 425K |
| 代理商： | 2SK2376(2-10S2B) |
2SK2376
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
—
±10
μA
Drain cutoff current
IDSS
VDS = 60 V, VGS = 0 V
—
100
μA
Drainsource breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
60
—
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
0.8
—
2.0
V
VGS = 4 V, ID = 25 A
—
19
25
Drainsource ON resistance
RDS (ON)
VGS = 10 V, ID = 25 A
—
13
17
m
Forward transfer admittance
|Yfs|
VDS = 10 V, ID = 25 A
28
40
—
S
Input capacitance
Ciss
—
3350
—
Reverse transfer capacitance
Crss
—
550
—
Output capacitance
Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
—
1600
—
pF
Rise time
tr
—
25
—
Turnon time
ton
—
55
—
Fall time
tf
—
60
—
Switching time
Turnoff time
toff
—
180
—
ns
Total gate charge (Gatesource
plus gatedrain)
Qg
—
110
—
Gatesource charge
Qgs
—
70
—
Gatedrain (“miller”) charge
Qgd
VDD ≈ 48 V, VGS = 10 V, ID = 45 A
—
40
—
nC
SourceDrain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
—
45
A
Pulse drain reverse current
(Note 1)
IDRP
—
180
A
Forward voltage (diode)
VDSF
IDR = 45 A, VGS = 0 V
—
1.7
V
Reverse recovery time
trr
—
120
—
ns
Reverse recovery charge
Qrr
IDR = 45 A, VGS = 0 V
dIDR / dt = 50 A / μs
—
0.2
—
μC
Marking
Note 4: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
Lot No.
Note 4
K2376
Part No. (or abbreviation code)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2376(TO-220FL) | 45 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2385 | 36 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2394-6 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2394-7 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 2SK2394 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2378 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| 2SK2379 | 制造商:SANYO 功能描述:MOSFET, N CH, 200V, 20A, TO-220ML Bulk 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A TO-220ML 制造商:Sanyo 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220ML |
| 2SK2380 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Junction FET |
| 2SK23800QL | 功能描述:JFET LOW FREQ.IMPEDANCE CONVRT RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場(chǎng)效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK2381 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 200V 5A 3PIN TO-220(NIS) - Rail/Tube |
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