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參數(shù)資料
| 型號(hào)： | 2SK2364 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 115K |
| 代理商： | 2SK2364 |
2SK2363/2SK2364
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-Resistance
R
DS (on)
0.4
0.5
V
GS
= 10 V
2SK2363
0.5
0.6
I
D
= 4.0 A
2SK2364
Gate to Source Cutoff Voltage
V
GS (off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
4.0
V
DS
= 10 V, I
D
= 4.0 A
Drain Leakage Current
I
DSS
100
V
DS
= V
DSS
, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
100
V
GS
=
±
30 V, V
DS
= 0
Input Capacitance
C
iss
1600
V
DS
= 10 V
Output Capacitance
C
oss
310
V
GS
= 0
Reverse Transfer Capacitance
C
rss
30
f = 1 MHz
Turn-On Delay Time
t
d (on)
20
I
D
= 4.0 A
Rise Time
t
r
13
V
GS
= 10 V
Turn-Off Delay Time
t
d (off)
83
V
DD
= 150 V
Fall Time
t
f
16
R
G
= 10
R
L
= 37.5
Total Gate Charge
Q
G
42
I
D
= 8 A
Gate to Source Charge
Q
GS
10
V
DD
= 400 V
Gate to Drain Charge
Q
GD
20
V
GS
= 10 V
Body Diode Forward Voltage
V
F (S-D)
1.0
I
F
= 8 A, V
GS
= 0
Reverse Recovery Time
t
rr
350
I
F
= 8 A, V
GS
= 0
Reverse Recovery Charge
Q
rr
1.5
di/dt = 50 A/
μ
s
UNIT
V
S
μ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1us
Duty Cycle
≤
1 %
GS
Wave Form
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2365 | Switching N-channel power MOS FET industrial use |
| 2SK2366 | Switching N-channel power MOS FET industrial use |
| 2SK2367 | Switching N-channel power MOS FET industrial use |
| 2SK2368 | Switching N-channel power MOS FET industrial use |
| 2SK2369 | Switching N-channel power MOS FET industrial use |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2364-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2365 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2365Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 10A I(D) | TO-263AB |
| 2SK2366 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2366Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 10A I(D) | TO-263AB |
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