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參數(shù)資料
| 型號(hào)： | 2SK2361 |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 450 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3P, MP-88, 3 PIN |
| 文件頁(yè)數(shù)： | 5/10頁(yè) |
| 文件大?。?/td> | 261K |
| 代理商： | 2SK2361 |
Data Sheet D11394EJ3V0DS
2
2SK2361, 2362
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
TEST CONDITIONS
Drain to Source On-Resistance
RDS (on)
0.7
0.9
Ω
VGS = 10 V
2SK2361
0.8
1.0
Ω
ID = 5.0 A
2SK2362
Gate to Source Cutoff Voltage
VGS (off)
2.5
3.5
V
VDS = 10 V, ID = 1 mA
Forward Transfer Admittance
| yfs |
3.0
S
VDS = 10 V, ID = 5.0 A
Drain Leakage Current
IDSS
100
A
VDS = VDSS, VGS = 0
Gate to Source Leakage Current
IGSS
±100
nA
VGS =
±30 V, VDS = 0
Input Capacitance
Ciss
1050
pF
VDS = 10 V
Output Capacitance
Coss
200
pF
VGS = 0
Reverse Transfer Capacitance
Crss
26
pF
f = 1 MHz
Turn-On Delay Time
td (on)
15
ns
ID = 5.0 A
Rise Time
tr
24
ns
VGS = 10 V
Turn-Off Delay Time
td (off)
50
ns
VDD = 150 V
Fall Time
tf
14
ns
RG = 10
Ω RL = 30 Ω
Total Gate Charge
QG
26
nC
ID = 10 A
Gate to Source Charge
QGS
6.1
nC
VDD = 400 V
Gate to Drain Charge
QGD
12
nC
VGS = 10 V
Body Diode Forward Voltage
VF (S-D)
1.0
V
IF = 10 A, VGS = 0
Reverse Recovery Time
trr
350
ns
IF = 10 A, VGS = 0
Reverse Recovery Charge
Qrr
2.0
C
di/dt = 50 A/
s
Test Circuit 3 Gate Charge
VGS = 20 - 0 V
PG
RG = 25
Ω
50
Ω
D.U.T.
L
VDD
Test Circuit 1 Avalanche Capability
PG.
RG = 10
Ω
D.U.T.
RL
VDD
Test Circuit 2 Switching Time
RG
PG.
IG = 2 mA
50 Ω
D.U.T.
RL
VDD
ID
VDD
IAS
VDS
BVDSS
Starting Tch
VGS
0
t = 1 us
Duty Cycle
≤ 1 %
VGS
Wave Form
ID
Wave Form
VGS
ID
10 %
0
90 %
10 %
VGS (on)
ID
ton
toff
td (on)
tr
td (off)
tf
t
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2361(A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2362 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2362K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2363 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK2363(AZ) | 制造商:Renesas Electronics Corporation 功能描述: |
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