參數(shù)資料
型號: 2SK2274
元件分類: JFETs
英文描述: 5 A, 700 V, 1.7 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SC-67, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 392K
代理商: 2SK2274
2SK2274
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSII
5
)
2SK2274
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 1.5 (typ.)
High forward transfer admittance
: |Yfs| = 2.5 S (typ.)
Low leakage current
: IDSS = 300 A (max) (VDS = 640 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
700
V
Draingate voltage (RGS = 20 k)
VDGR
700
V
Gatesource voltage
VGSS
±30
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
15
A
Drain power dissipation (Tc = 25°C)
PD
45
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
2.77
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
相關(guān)PDF資料
PDF描述
2SK2280-4101 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2280-4061 5 A, 60 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2281 10 A, 60 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2286 20 A, 60 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET
2SJ375 30 A, 60 V, 0.045 ohm, P-CHANNEL, Si, POWER, MOSFET
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