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參數(shù)資料
| 型號： | 2SK2272-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | Direct mounting on the PCB, Crimping connection, Discrete wire connectors; HRS No: 544-0092-4 00; No. of Positions: 32; Connector Type: Wire; Contact Gender: Male; Contact Spacing (mm): 2; Terminal Pitch (mm): 2; Current Rating(Amps)(Max.): 3; Operating Temperature Range (degrees C): -30 to 85; General Description: Plug; Crimping; Direct PCB mounting; Double row |
| 中文描述： | 5 A, 900 V, 2.8 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 92K |
| 代理商： | 2SK2272-01R |
N-channel MOS-FET
900V
2,8
> Characteristics
2SK2272-01R
FAP-IIA Series
5A
80W
Typical Output Characteristics
I
D
=f(V
DS
); 80μs pulse test; T
C
=25°C
Drain-Source On-State Resistance
R
DS(on)
= f(T
ch
); I
D
=5A; V
GS
=10V
Typical Transfer Characteristics
I
D
=f(V
GS
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
↑
I
D
↑
R
D
]
↑
I
D
1
2
3
V
DS
[V]
→
T
ch
[°C]
→
V
GS
[V]
→
Typical Drain-Source On-State-Resistance
R
DS(on)
=f(I
D
); 80μs pulse test; T
C
=25°C
Typical Forward Transconductance
g
fs
=f(I
D
); 80μs pulse test; V
DS
=25V; T
ch
=25°C
Gate Threshold Voltage vs. T
ch
V
GS(th)
=f(T
ch
); I
D
=1mA; V
DS
=V
GS
↑
R
D
]
↑
g
f
↑
V
G
4
5
6
I
D
[A]
→
I
D
[A]
→
T
ch
[°C]
→
Typical Capacitances
C=f(V
DS
); V
GS
=0V; f=1MHz
Typical Gate Charge Characteristics
V
GS
=f(Qg); I
D
=5A
Forward Characteristics of Reverse Diode
I
F
=f(V
SD
); 80μs pulse test
↑
C
↑
V
D
↑
V
G
↑
I
F
7
8
9
V
DS
[V]
→
Qg [nC]
→
V
SD
[V]
→
Power Dissipation
P
D
=f(Tc)
Safe Operation Area
I
D
=f(V
DS
): D=0,01, Tc=25°C
↑
Z
t
Transient Thermal impedance
Z
thch-c
=f(t) parameter:D=t/T
↑
P
D
[
10
↑
I
D
12
T
ch
[°C]
→
V
DS
[V]
→
t [s]
→
Collmer Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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