參數(shù)資料
型號： 2SK2226-01S
廠商： FUJI ELECTRIC CO LTD
元件分類： JFETs
英文描述： N-channel MOS-FET
中文描述： 20 A, 150 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： TPACK-3
文件頁數(shù)： 1/2頁
文件大?。?/td> 125K
代理商： 2SK2226-01S
2SK2226-01L,S
F-III Series
N-channel MOS-FET
150V
0,08
20A
80W
> Features
-
High Current
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Forward Transconductance
> Outline Drawing
> Applications
-
Motor Control
-
General Purpose Power Amplifier
-
DC-DC converters
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage (R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
150
150
20
80
±20
80
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA V
DS=
V
GS
V
DS
=150V
V
GS
=0V
V
GS
=±20V
I
D
=10A
I
D
=10A
I
D
=10A
V
DS
=25V
Min.
150
1,0
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
V
ns
μC
V
GS
=0V
1,5
10
0,2
10
2,5
500
1,0
100
0,1
0,08
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=4V
V
GS
=10V
V
DS
=25V
Gate Source Leakage Current
Drain Source On-State Resistance
I
GSS
R
DS(on)
0,065
0,055
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
V
SD
t
rr
Q
rr
10
20
2300
330
150
15
20
450
100
3450
500
230
25
30
700
150
V
GS
=0V
f=1MHz
V
CC
=30V
I
D
=20A
V
GS
=10V
R
GS
=25
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L=100μH
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
T
ch
=25°C
20
1,1
125
0,6
1,5
- Thermal Characteristics
Item
Thermal Resistance
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
125
1,56
Unit
°C/W
°C/W
Collmer Semconductor, Inc. - P.O. Box 702708 - Dallas, TX - 75370 - 972-233-1589 - FAX 972-233-0481 - http://www.collmer.com
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