參數(shù)資料
型號: 2SK2173
元件分類: JFETs
英文描述: 50 A, 60 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-16C1B, 3 PIN
文件頁數(shù): 1/6頁
文件大?。?/td> 436K
代理商: 2SK2173
2SK2173
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
2
πMOSV)
2SK2173
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 13 m (typ.)
High forward transfer admittance
: |Yfs| = 40 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC (Note 1)
ID
50
A
Drain current
Pulse (Note 1)
IDP
200
A
Drain power dissipation (Tc = 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
683
mJ
Avalanche current
IAR
50
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.0
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 371 H, RG = 25 , IAR = 50 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
JEITA
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
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