參數(shù)資料
型號: 2SK2159
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應(yīng)晶體管的高速開關(guān)
文件頁數(shù): 4/6頁
文件大?。?/td> 62K
代理商: 2SK2159
2SK2159
4
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
0
0.001
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
101
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
V
SD
- Source to Drain Voltage - V
I
S
0.001
0.2
0.6
0.8
1.2
1.4
0.01
1
10
T
A
= 75
°
C
25
°
C
–25
°
C
20
50
100
200
500
1 000
2
5
10
20
50
100
C
iss
C
oss
C
rss
10
20
50
100
200
500
1 000
0.2
0.5
1
2
5
10
0.1
t
r
t
f
t
d(off)
t
d(on)
V
DD
= 25 V
V
GS(on)
= 3 V
R
G
= 10
0.01
0.1
1
10
0.4
0.6
0.8
1.0
1.2
V
GS
= 2.5 V
V
= 0
f = 1 MHz
1.0
0.4
0.1
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
0.2
0.4
0.6
0.8
1
4
6
12
14
I
D
= 2 A
0
0.001
0.2
0.6
0.8
1.2
1.4
0.01
1
10
T
A
= 75
°
C
25
°
C
–25
°
C
V
GS
= 4.0 V
1.0
0.4
0.1
I
D
= 1 A
2
8
10
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2159-AZ 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA
2SK2159-T1 制造商:Renesas Electronics Corporation 功能描述:
2SK2159-T1(AZ) 制造商:Renesas Electronics 功能描述:60V(Max) 60A(Max) 0.0087@10V(Max) TO252-3 Tape & Reel 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R
2SK2159-T1-AZ 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 2A 4-Pin(3+Tab) SC-62 T/R
2SK2159-T2-AZ 制造商:Renesas Electronics Corporation 功能描述: