參數(shù)資料
型號(hào): 2SK2139
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 111K
代理商: 2SK2139
2SK2139
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
TEST CONDITIONS
Drain to Source On-state Resistance
R
DS(on)
1.1
1.5
V
GS
= 10 V, I
D
= 2.5 A
Gate to Source Cutoff Voltage
V
GS(off)
2.5
3.5
V
DS
= 10 V, I
D
= 1 mA
Forward Transfer Admittance
| y
fs
|
1.5
V
DS
= 10 V, I
D
= 2.5 A
Drain Leakage Current
I
DSS
100
V
DS
= 600 V, V
GS
= 0
Gate to Source Leakage Current
I
GSS
±
100
V
GS
=
±
30 V, V
DS
= 0
Input Capacitance
C
iss
930
V
DS
= 10 V
Output Capacitance
C
oss
200
V
GS
= 0
Reverse Transfer Capacitance
C
rss
40
f = 1 MHz
Turn-On Delay Time
t
d(on)
20
V
GS
= 10 V
Rise Time
t
r
10
V
DD
= 150 V
I
D
= 2.5 A, R
G
= 10
Turn-Off Delay Time
t
d(off)
60
Fall Time
t
f
12
R
L
= 60
Total Gate Charge
Q
G
30
V
GS
= 10 V
Gate to Source Charge
Q
GS
6.0
I
D
= 5.0 V
Gate to Drain Charge
Q
GD
15
V
DD
= 450 V
Diode Forward Voltage
V
F(S-D)
1.0
I
F
= 5.0 A, V
GS
= 0
Reverse Recovery Time
t
rr
320
I
F
= 5.0 A
Reverse Recovery Charge
Q
rr
1.4
di/dt = 50 A/
μ
s
UNIT
V
S
μ
A
nA
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
μ
C
The application circuits and their parameters are for references only and are not intended for use in actual design-in's.
Test Circuit 3 Gate Charge
V
GS
= 20 - 0 V
PG
R
G
= 25
50
D.U.T.
L
V
DD
Test Circuit 1 Avalanche Capability
PG.
R
G
= 10
D.U.T.
R
L
V
DD
Test Circuit 2 Switching Time
R
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
t = 1us
Duty Cycle
1 %
GS
Wave Form
D
Wave Form
V
GS
I
D
10 %
10 %
0
0
90 %
90 %
90 %
10 %
V
GS (on)
I
D
t
on
t
off
t
d (on)
t
r
t
d (off)
t
f
t
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