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參數(shù)資料
| 型號： | 2SK2115 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220CFM, 3 PIN |
| 文件頁數(shù)： | 5/8頁 |
| 文件大?。?/td> | 48K |
| 代理商： | 2SK2115 |
2SK2114, 2SK2115
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source
2SK2114
V
(BR)DSS
450
—
V
I
D = 10 mA, VGS = 0
breakdown
voltage
2SK2115
500
Gate to source breakdown
voltage
V
(BR)GSS
±30
—
V
I
G = ±100 A, VDS = 0
Gate to source leak current
I
GSS
—
±10
A
V
GS = ±25 V, VDS = 0
Zero gate
2SK2114
I
DSS
—
250
A
V
DS = 360 V, VGS = 0
voltage drain
current
2SK2115
V
DS = 400 V, VGS = 0
Gate to source cutoff voltage
V
GS(off)
2.0
—
3.0
V
I
D = 1 mA, VDS = 10 V
Static drain to
2SK2114
R
DS(on)
—
1.0
1.4
I
D = 2.5 A, VGS = 10 V*
1
source on state
resistance
2SK2115
—
1.2
1.5
Forward transfer admittance
|y
fs|
2.5
4.0
—
S
I
D = 2.5 A
V
DS = 10 V*
1
Input capacitance
Ciss
—
640
—
pF
V
DS = 10 V
Output capacitance
Coss
—
160
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
20
—
pF
f = 1 MHz
Turn-on delay time
t
d(on)
—
10
—
ns
I
D = 2.5 A
Rise time
t
r
—
25
—
ns
V
GS = 10 V
Turn-off delay time
t
d(off)
—
50
—
ns
R
L = 12
Fall time
t
f
—30—ns
Body to drain diode forward
voltage
V
DF
—
0.95
—
V
I
F = 5 A, VGS = 0
Body to drain diode reverse
recovery time
t
rr
—
300
—
ns
I
F = 5 A, VGS = 0,
di
F / dt = 100 A / s
Note
1. Pulse Test
See characteristics curve of 2SK1155, 2SK1156.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2116 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2117 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2118 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK2119 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 25A I(D) | TO-220FN |
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