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參數(shù)資料
| 型號(hào)： | 2SK2112 |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING |
| 中文描述： | N溝道場(chǎng)效應(yīng)晶體管的高速開關(guān) |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 2SK2112 |
2SK2112
3
TYPICAL CHARACTERISTICS (T
A
= 25 C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
0
30
60
90
120
150
T
A
- Ambient Temperature - C
d
FORWARD BIAS SAFE OPERATING AREA
10
5
2
1
0.2
0.1
2
5
20
50
100
V
DS
- Drain to Source Voltage - V
I
D
0.5
1
10
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
1.0
0.8
0.6
0.4
0.2
0
0.4
0.8
1.2
1.6
2.0
V
DS
- Drain to Source Voltage - V
I
D
10ms
1ms
PW=100ms
DC
4.5 V
4.0 V
3.5 V
3.0 V
2.5 V
10 V
V
GS
= 2.0 V
TRANSFER CHARACTERISTICS
1
0.1
0.01
0.001
0.5
1
1.5
2
2.5
3
V
GS
- Gate to Source Voltage - V
I
D
0.0001
V
DS
= 10 V
T
A
= 75 C
25 C
–25 C
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
10
1
0.1
0.001
0.01
0.1
1
I
D
- Drain Current - A
|
f
|
0.01
V
DS
= 10 V
25 C
75 C
T
A
= –25 C
DRAIN TO SOURCE ON-STATE RESISTANCE
vs. DRAIN CURRENT
1.5
1
0.01
0.1
1
10
I
D
- Drain Current - A
R
D
0
V
GS
= 4 V
0.5
T
A
= 75 C
25 C
–25 C
Single pulse
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2112-AZ | 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA |
| 2SK2112-T1-AZ | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas Electronics Corporation 功能描述:SEMICONDUCTOR, DESCRETE, MOS, FET, N CHA 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 1A 4-Pin(3+Tab) SC-62 T/R |
| 2SK2113 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
| 2SK2114 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
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