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參數(shù)資料
| 型號(hào)： | 2SK211-O |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-236 |
| 封裝： | 2-3F1C, S-MINI, SC-59, 3 PIN |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 715K |
| 代理商： | 2SK211-O |
2SK211
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK211
FM Tuner Applications
VHF Band Amplifier Applications
Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz)
High forward transfer admitance: |Yfs| = 9 mS (typ.)
Extremely low reverse transfer capacitance: Crss = 0.1 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDO
18
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Marking
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = 0.5 V, VDS = 0 V
10
nA
Gate-drain breakdown voltage
V (BR) GDO
IG = 100 μA
18
V
Drain current
IDSS
(Note)
VGS = 0 V, VDS = 10 V
1.0
10
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 1 μA
0.4
4.0
V
Forward transfer admittance
Yfs
VGS = 0 V, VDS = 10 V, f = 1 kHz
9
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
6.0
pF
Reverse transfer capacitance
Crss
VGD = 10 V, f = 1 MHz
0.15
pF
Power gain
GPS
VDD = 10 V, f = 100 MHz (Figure)
18
dB
Noise figure
NF
VDD = 10 V, f = 100 MHz (Figure)
2.5
3.5
dB
Note: IDSS classification O: 1.0~3.0 mA, Y: 2.5~6.0 mA, GR (G): 5.0~10.0 mA
Unit: mm
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1C
Weight: 0.012 g (typ.)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK211Y | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | JFET | N-CHANNEL | 2.5MA I(DSS) | SC-59 |
| 2SK212 | 制造商:SANYO 制造商全稱(chēng):Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET(FM Tuner Applications) |
| 2SK2120 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
| 2SK2121 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-247VAR |
| 2SK2122 | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述: |
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