參數(shù)資料
型號: 2SK2109
廠商: NEC Corp.
英文描述: N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
中文描述: N溝道場效應晶體管的高速開關(guān)
文件頁數(shù): 2/6頁
文件大小: 58K
代理商: 2SK2109
2SK2109
2
ELECTRICAL CHARACTERISTICS (T
A
= 25 C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain Cut-Off Current
I
DSS
V
DS
= 60 V, V
GS
= 0
1.0
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
±
10
μ
A
Gate Cut-Off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
0.8
1.5
2.0
V
Forward Transfer Admittance
|y
fs
|
V
DS
= 10 V, I
D
= 0.3 A
0.4
S
Drain to Source On-State Resistance
R
DS(on)1
V
GS
= 4.0 V, I
D
=0.3 A
0.55
1.0
Drain to Source On-State Resistance
R
DS(on)2
V
GS
= 10 V, I
D
= 0.3 A
0.41
0.8
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0,
f = 1.0 MHz
111
pF
Output Capacitance
C
oss
55
pF
Reverse Transfer Capacitance
C
rss
19
pF
Turn-On Delay Time
t
d(on)
V
DD
= 25 V, I
D
= 0.3 A
V
GS(on)
= 10 V, R
G
= 10
2.2
ns
Rise Time
t
r
1.5
ns
Turn-Off Delay Time
t
d(off)
R
L
= 83
35
ns
Fall Time
t
f
19
ns
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